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Direct measurement of ferroelectric polarization in a tunable …
Free carriers and electrical polarization coexist in ferroelectric metals. Here, the authors use a capacitive method to probe the electronic compressibility of free carriers in a tunable semimetal ...
The future of ferroelectric field-effect transistor technology
Ferroelectric materials exhibit unique features such as hysteresis, non-volatility, plasticity, negative dielectric permittivity/negative capacitance 10, stochasticity 11, ferroelasticity and ...
Ferroelectric One Transistor/One Capacitor Memory Cell
Different nonvolatile memory concepts are competing for urgently needed low-power, high-speed solutions. Among them, a capacitor-based FeRAM using ferroelectric HfO 2 is reviving the possibilities of FeRAM due to the simple integration possibilities of the material in high aspect ratio capacitor structures, its known properties …
Modeling ferroelectric capacitors for memory applications
The ferroelectric capacitor model is the foundation for accurate simulation of ferroelectric hysteresis loops and minor loops, transitions between the loops …
Inhibiting the imprint effect of the TiN/HZO/TiN ferroelectric capacitor …
Recently, hafnium-based ferroelectric devices have received significant attention from the industry and academia owing to their high speed, low power consumption, complementary metal–oxide–semiconductor (CMOS) compatibility, and high scalability. 1–5 Ferroelectric capacitors (FeCAPs) are the basis of ferroelectric devices, usually of …
A ferroelectric fin diode for robust non-volatile memory
In this work, we propose a two-terminal ferroelectric fin diode (FFD) in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes ...
Ferroelectric capacitors and field-effect transistors as in-memory …
This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) …
Improved Reliability for Back-End-of-Line Compatible Ferroelectric Capacitor …
Abstract: AlON/HfZrOx (HZO)/HfO2 stack with post-deposition annealing (PDA) process at 400 C is proposed to implement BEOL compatible ferroelectric (FE) capacitors. While interface engineering by AlON and HfO2 enhances $text{P}_{text {r}}$ to enable more bits storage, PDA reduces oxygen vacancies in the HZO by eliminating the …
Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor …
In this work, we study hafnium zirconate (HZO) based ferroelectric (FE) capacitors (FeCAP) intended for random access memory and compute-in-memory (CiM) applications. We show that there exists a discrepancy between the coercive voltages (V C) extracted from a small-signal capacitance–voltage (C-V) measurement ({V C} CV) and …
Preisach model for the simulation of ferroelectric capacitors
Preisach model for the simulation of ferroelectric capacitors Andrei T. Bartic,a) Dirk J. Wouters, and Herman E. Maes IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Ju¨rgen T. Rickes and Rainer M ...
Ferroelectric capacitor
Ferroelectric capacitor is a capacitor based on a ferroelectric material. In contrast, traditional capacitors are based on dielectric materials. Ferroelectric devices are used in digital electronics as part of ferroelectric RAM, or in analog electronics as tunable capacitors (varactors). In memory applications, the stored value of a ferroelectric capacitor is read by …
A Simple Strategy to Realize Super Stable Ferroelectric …
Furthermore, it exhibits very stable ferroelectric properties without a wake-up effect or significant fatigue, up to 10 8 cycles even under a severe electric field of 3.5 …
Negative capacitance in a ferroelectric capacitor
''negative di˙erential capacitance''. For a ferroelectric material, as shown in Fig. 1a, the capacitance is negative only in the barrier region around Q F D0. Starting from an initial state P, as a voltage is applied across the ferroelectric capacitor, the energy landscape
A review of ferroelectric materials for high power devices
The energy, W, stored in a capacitor (7) W = C V 2 /2 where V is the voltage across the capacitor and C is the capacitance of the capacitor. The energy density for a capacitor with a linear dielectric medium (8) w = ε r ε 0 E 2 /2 where ε r is the relative dielectric permittivity of a linear dielectric and E is the electric field within the capacitor.
Ferroelectric Capacitor: Structure, Process, Application and …
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Transient Modeling of Ferroelectric Capacitors for Semiconductor …
Present ferroelectric (FE) capacitor models mostly rely on hysteresis loop characteristics of FE materials. Our experimental results show that this approach overestimates the …
Toward Design Rules for Multilayer Ferroelectric Energy Storage Capacitors – A Study Based on Lead‐Free and Relaxor‐Ferroelectric ...
Advanced Materials, one of the world''s most prestigious journals, is the home of choice for best-in-class materials science for more than 30 years. E ∞ describes the relaxor behavior determining the rate with which the polarization approaches the limiting value on the high field tangent P(E) = P 0 + ε 0 ε HF E. ε HF is the high field dielectric …
Modeling ferroelectric capacitor switching using a parallel …
Abstract The charge-voltage (Q-V) relationship of ferroelectric capacitors experiencing arbitrary applied voltages is investigated both theoretically and experimentally. The complex behavior and history dependence of a ferroelectric capacitor in response to arbitrary voltage patterns can be well described by a parallel-elements model. This approach not …
Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor …
We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg = 100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n …
[2409.06156] On the negative capacitance in ferroelectric …
7 · Abstract: Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric …